Surfaces, Interfaces, and Applications
- An-Feng Wang
An-Feng Wang
Institute of Wide Bandgap Semiconductors and Future Lighting, Academy for Engineering & Technology, Fudan University, Shanghai 200433, China
Shanghai Research Center for Silicon Carbide Power Devices Engineering & Technology, Fudan University, Shanghai 200433, China
More by An-Feng Wang
- Hong-Ping Ma*
Hong-Ping Ma
Institute of Wide Bandgap Semiconductors and Future Lighting, Academy for Engineering & Technology, Fudan University, Shanghai 200433, China
Shanghai Research Center for Silicon Carbide Power Devices Engineering & Technology, Fudan University, Shanghai 200433, China
Institute of Wide Bandgap Semiconductor Materials and Devices, Research Institute of Fudan University in Ningbo, Zhejiang 315327, China
*Email: [emailprotected]
More by Hong-Ping Ma
- Qi-Min Huang
Qi-Min Huang
Institute of Wide Bandgap Semiconductors and Future Lighting, Academy for Engineering & Technology, Fudan University, Shanghai 200433, China
Shanghai Research Center for Silicon Carbide Power Devices Engineering & Technology, Fudan University, Shanghai 200433, China
More by Qi-Min Huang
- Lin Gu
Lin Gu
Institute of Wide Bandgap Semiconductors and Future Lighting, Academy for Engineering & Technology, Fudan University, Shanghai 200433, China
Shanghai Research Center for Silicon Carbide Power Devices Engineering & Technology, Fudan University, Shanghai 200433, China
More by Lin Gu
- Yi Shen
Yi Shen
Institute of Wide Bandgap Semiconductors and Future Lighting, Academy for Engineering & Technology, Fudan University, Shanghai 200433, China
Shanghai Research Center for Silicon Carbide Power Devices Engineering & Technology, Fudan University, Shanghai 200433, China
More by Yi Shen
- Chengxi Ding
Chengxi Ding
Institute of Wide Bandgap Semiconductors and Future Lighting, Academy for Engineering & Technology, Fudan University, Shanghai 200433, China
Shanghai Research Center for Silicon Carbide Power Devices Engineering & Technology, Fudan University, Shanghai 200433, China
See AlsoExcited-State Energy Manipulation Enables Single-Layer White Light-Emitting Diodes to Simulate the Solar SpectrumHigh Aspect Ratio Silicon Nanohole Arrays via Electric-Field-Incorporated Metal-Assisted Chemical EtchingDependence of Film Porosity on the Adsorption and Removal of Organic Contaminants from the Surface of Optical ComponentsUltralow Powered 2D MoS2-Based Memristive Crossbar Array for Synaptic ApplicationsMore by Chengxi Ding
- Yang-Chao Liu
Yang-Chao Liu
Institute of Wide Bandgap Semiconductors and Future Lighting, Academy for Engineering & Technology, Fudan University, Shanghai 200433, China
Shanghai Research Center for Silicon Carbide Power Devices Engineering & Technology, Fudan University, Shanghai 200433, China
More by Yang-Chao Liu
- Kun Xu
Kun Xu
Nanofabrication Facility, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, Jiangsu 215123, China
More by Kun Xu
- Li Zhucheng
Li Zhucheng
Nanofabrication Facility, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, Jiangsu 215123, China
More by Li Zhucheng
- Li Zhang*
Li Zhang
Nanofabrication Facility, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, Jiangsu 215123, China
*Email: [emailprotected]
More by Li Zhang
- Xiaodong ZHANG
Xiaodong ZHANG
Nanofabrication Facility, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, Jiangsu 215123, China
More by Xiaodong ZHANG
- Qing-Chun Zhang
Qing-Chun Zhang
Institute of Wide Bandgap Semiconductors and Future Lighting, Academy for Engineering & Technology, Fudan University, Shanghai 200433, China
Shanghai Research Center for Silicon Carbide Power Devices Engineering & Technology, Fudan University, Shanghai 200433, China
Institute of Wide Bandgap Semiconductor Materials and Devices, Research Institute of Fudan University in Ningbo, Zhejiang 315327, China
More by Qing-Chun Zhang
Other Access Options
ACS Applied Materials & Interfaces
Cite this: ACS Appl. Mater. Interfaces 2025, XXXX, XXX, XXX-XXX
Click to copy citationCitation copied!
https://pubs.acs.org/doi/10.1021/acsami.5c04203
Published April 28, 2025
Publication History
Received
Accepted
Revised
Published
online
research-article
© 2025 American Chemical Society
Request reuse permissions
Abstract
Click to copy section linkSection link copied!
β-phase gallium oxide (β-Ga2O3)/aluminum nitride (AlN) heterojunctions hold significant potential for high-power and microwave device applications. In this study, we systematically investigated the properties of the β-Ga2O3/AlN heterostructure grown via metal–organic chemical vapor deposition (MOCVD). High-resolution X-ray diffraction (HRXRD) and Raman spectroscopy revealed the crystal structures and demonstrated the high-crystalline quality of both films. Atomic force microscopy (AFM) scans displayed a smooth β-Ga2O3 surface with a root-mean-square (RMS) roughness of 3.6 nm. Scanning electron microscopy (SEM) images showed a flat surface with distinct heterostructure boundaries. Elemental distributions across the interface were mapped by using energy-dispersive spectroscopy (EDS). X-ray photoelectron spectroscopy (XPS) analysis characterized the chemical components of the sample and confirmed a type-II band alignment in the heterojunction, which facilitates electron accumulation. Furthermore, the thermal conductivity of β-Ga2O3 was measured at 4.2 W/(m·K), and the thermal boundary conductivity at the β-Ga2O3/AlN interface was determined to be 118.6 MW/(m2·K) using the time-domain thermoreflectance (TDTR) method. Temperature-dependent electrical performance of the β-Ga2O3/AlN SBD, including a low turn-on voltage of 0.1 V, ideality factor of 4.22, modified Richardson constant of 48.5 A/cm2 K2, and high breakdown voltage of 1260 V, was obtained. All of these values are competitive among β-Ga2O3-based heterostructures. The findings highlight the excellent interface quality, superior heat dissipation capability, and decent SBD performance of the β-Ga2O3/AlN integration, offering a promising platform for developing β-Ga2O3-based power devices capable of operating at high temperatures.
ACS Publications
© 2025 American Chemical Society
Subjects
what are subjects
Article subjects are automatically applied from the ACS Subject Taxonomy and describe the scientific concepts and themes of the article.
- Diodes
- Heterojunctions
- Heterostructures
- Schottky barrier
- Thin films
Keywords
what are keywords
Article keywords are supplied by the authors and highlight key terms and topics of the paper.
Read this article
To access this article, please review the available access options below.
Get instant access
Purchase Access
Read this article for 48 hours. Check out below using your ACS ID or as a guest.
Recommended
Access through Your Institution
You may have access to this article through your institution.
Your institution does not have access to this content. Add or change your institution or let them know you’d like them to include access.
Recommended
Log in to Access
You may have access to this article with your ACS ID if you have previously purchased it or have ACS member benefits. Log in below.
-
Purchase access
Purchase this article for 48 hours $48.00 Add to cart Purchase this article for 48 hours Checkout
Cited By
Click to copy section linkSection link copied!
This article has not yet been cited by other publications.
Download PDF
Get e-Alerts
Get e-Alerts
ACS Applied Materials & Interfaces
Cite this: ACS Appl. Mater. Interfaces 2025, XXXX, XXX, XXX-XXX
Click to copy citationCitation copied!
Published April 28, 2025
Publication History
Received
Accepted
Revised
Published
online
© 2025 American Chemical Society
Request reuse permissions
Article Views
-
Altmetric
-
Citations
-
Learn about these metrics
Article Views are the COUNTER-compliant sum of full text article downloads since November 2008 (both PDF and HTML) across all institutions and individuals. These metrics are regularly updated to reflect usage leading up to the last few days.
Citations are the number of other articles citing this article, calculated by Crossref and updated daily. Find more information about Crossref citation counts.
The Altmetric Attention Score is a quantitative measure of the attention that a research article has received online. Clicking on the donut icon will load a page at altmetric.com with additional details about the score and the social media presence for the given article. Find more information on the Altmetric Attention Score and how the score is calculated.
